2009 IEEE  INTERNATIONAL SOI  CONFERENCE

5 - 8 October, 2009 ▪ Crowne Plaza Hotel ▪ Foster City, California  USA

SUBMISSION DEADLINE EXTENDED
29-MAY-2009

The deadline for submitting abstracts for consideration for presentation at the 2009 IEEE International SOI Conference has been extended to Friday, May 29th.

 

SOI in the Silicon Valley

This year's premier meeting of engineers and scientists dedicated to current trends in Silicon-on-Insulator technology will meet in Foster City, part of California's famed Silicon Valley.  The IEEE Electron Devices Society sponsored conference traditionally provides a forum for open discussion in all areas of silicon-on-insulator technologies and their applications.

Ever increasing demand and advances in SOI and related technologies make it essential to meet to discuss new gains and accomplishments, as well as to consider new developments introduced in original papers presented at the conference.  

AREAS of FOCUS

  • SOI device physics and modeling
  • Manufacturability and process integration of soi devices
  • Low-power SOI technology and circuit design infrastructure  
  • SOI circuit applications (high-performance mpu, sram, asic, high-voltage, rf, analog, mixed mode, etc.)
  • SOI double & multiple gate/vertical channel structures; other novel SOI structures
  • New SOI structures, circuits, and applications (3d integration, displays, microactuators, novel memories, optics, etc.)
  • SOI reliability issues (hot-carrier effects, radiation effects, high-temperature effects, etc.)
  • SOI material science/modification, material characterization, manufacture, and substrate engineering.
  • SOI sensors, MEMS and RFIDs technology and applications