October 6 - 9, 2008
2008 IEEE International SOI Conference
The IEEE International SOI Conference is the premier
meeting of engineers and scientists dedicated to current
trends in Silicon-on-Insulator technology and provides a
forum for open discussion in all areas of silicon-on-insulator
technologies and their applications.
Ever increasing demand and advances in this technology make
it essential to meet to discuss new gains and accomplishments, as
well as to consider the new developments introduced in original
papers presented at the conference. The IEEE Electron
Devices Society will sponsor the 34th SOI Conference 6 – 9 October, 2008 at the
Mohonk Mountain House in the beautiful Hudson River Valley in
upstate New York.
Areas of Focus
- SOI
device physics and modeling
- Manufacturability and process integration of soi devices
- Low-power SOI technology and circuit design infrastructure
- SOI circuit
applications (high-performance mpu, sram, asic,
high-voltage, rf, analog, mixed mode, etc.)
- SOI double &
multiple gate/vertical channel structures; other novel SOI
structures
- New
SOI structures, circuits, and applications (3d
integration, displays, microactuators, novel
memories, optics, etc.)
- SOI
reliability issues (hot-carrier effects, radiation effects,
high-temperature effects, etc.)
- S
- SOI sensors, MEMS and RFIDs technology and
applications